FM24C16A

The versatility of FRAM technology fits into many diverse applications. Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile.

The FM24C16A is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. FM24C16A provides reliable data retention for over 10 years while eliminating the complexities, overhead,and system level reliability problems caused by EEPROM and other nonvolatile memories.

Unlike serial EEPROMs, the FM24C16A performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. The FM24C16A is capable of supporting 10¹² read/write cycles, or a million times more write cycles than EEPROM.

These capabilities make the FM24C16A ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows the system to write data more frequently, with less system overhead.

The FM24C16A provides substantial benefits to users of serial EEPROM, and these benefits are available as a hardware drop-in replacement. The FM24C16A is available in an industry standard 8-pin SOIC and uses a two-wire protocol. The specifications are guaranteed over the industrial temperature range from -40°C to +85°C.