DescriptionThe FM24C04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or FRAM, is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead...
FM24C04: DescriptionThe FM24C04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or FRAM, is nonvolatile but operates in other respects as ...
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The FM24C04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or FRAM, is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM24C04 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array mere hundreds of nanoseconds after it has been successfully transferred to the device. The next bus cycle may commence immediately. In addition the product offers substantial write endurance compared with other nonvolatile memories. The FM24CO4 is capable of supporting up to lE10 read/write cycles far more than most systems will require from a serial memory. These capabilities make the FM24C04 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24C04 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24C04 is provided in industry standard 8-pin packages using a familiar two-wire protocol. They are guaranteed over an industrial temperature range of -40°C to +85°C.
The features of FM24C04 can be summarized as (1)4K bit ferroelectric nonvolatile RAM: organized as 512 x 8 bits, high endurance 10 Billion (10^10) read/writes, 10 year data retention at 85°C, no write delay, advanced high-reliability ferroelectric process; (2)fast two-wire serial interface: Up to 400 kHz maximum bus frequency, direct hardware replacement for EEPROM; (3)low power operation: true 5V operation, 150A Active current (100 kHz), 10 A standby current; (4)industry standard configuration: industrial temperature to 40°C to 85°C, 8-pin SOP or DIP.
The absolute maximum ratings of FM24C04 are (1)ambient storage or operating temperature: -40°C to + 85°C; (2)voltage on any pin with respect to ground: -10V to +70V; (3)DCoutput current on any pin: 5mA; (4)lead temperature (Solderin 10 seconds): 300°C.(stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and the functional operation ofthe device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability).