Features: · Organized as 32,768 x 8 bits· 10 year data retention at 85° C· Unlimited read/write cycles· NoDelay™ write· Advanced high-reliability ferroelectric processApplicationAs a true nonvolatile RAM, the FM18L08 fits intomany diverse applications. Clearly, its monolithicnature and high ...
FM18L08: Features: · Organized as 32,768 x 8 bits· 10 year data retention at 85° C· Unlimited read/write cycles· NoDelay™ write· Advanced high-reliability ferroelectric processApplicationAs a true nonv...
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The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. FM18L08 provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Fast-write time and practically unlimited read/write endurance make it superior to other types of nonvolatile memory and a good substitute for ordinary SRAM.
In-system operation of the FM18L08 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM18L08 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the
serious disadvantages associated with modules and batteries or hybrid memory solutions.
These capabilities make the FM18L08 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM18L08 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.