FM18L08

Features: · Organized as 32,768 x 8 bits· 10 year data retention at 85° C· Unlimited read/write cycles· NoDelay™ write· Advanced high-reliability ferroelectric processApplicationAs a true nonvolatile RAM, the FM18L08 fits intomany diverse applications. Clearly, its monolithicnature and high ...

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SeekIC No. : 004342190 Detail

FM18L08: Features: · Organized as 32,768 x 8 bits· 10 year data retention at 85° C· Unlimited read/write cycles· NoDelay™ write· Advanced high-reliability ferroelectric processApplicationAs a true nonv...

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Part Number:
FM18L08
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·  Organized as 32,768 x 8 bits
·  10 year data retention at 85° C
·  Unlimited read/write cycles
·  NoDelay™ write
·  Advanced high-reliability ferroelectric process



Application

As a true nonvolatile RAM, the FM18L08 fits into many diverse applications. Clearly, its monolithic nature and high performance make it superior to battery-backed SRAM in most every application. Unlimited endurance allows the FM18L08 to be used in applications that could not take advantage of the previous generation of RAM products. This applications guide is intended to facilitate the transition from BBSRAM to FRAM. It is divided into two parts. First is a treatment of the advantages of FRAM memory compared with battery-backed SRAM. Second is a design guide, which highlights the simple design considerations that should be reviewed in both retrofit and new design situations.


Pinout

  Connection Diagram


Description

The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. FM18L08 provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Fast-write time and practically unlimited read/write endurance make it superior to other types of nonvolatile memory and a good substitute for ordinary SRAM.

In-system operation of the FM18L08 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM18L08 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the
serious disadvantages associated with modules and batteries or hybrid memory solutions.

These capabilities make the FM18L08 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM18L08 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.




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