FM1608B

The FM1608B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. The features of FM1608B are as follows: (1)64Kbit Ferroelectric Nonvolatile RAM; (2)Superior to Battery-Backed SRAM; (3)SRAM & EEPROM Compatible; (4)Low Power Operation; (5)Industry Standard Configurations.

The following is about the absolute maximum ratings of FM1608B: (1)Power Supply Voltage with respect to VSS: -1.0V to +7.0 V; (2)Voltage on any pin with respect to VSS: -1.0V to +7.0 V and VIN < VDD+1.0V *; (3)Storage Temperature: -55°C to +125°C; (4)Lead Temperature (Soldering, 10 seconds): 260°C.

The electrical characteristics of the FM1608B are: (1)Power Supply voltage: 4.5 V min and 5.5 V max; (2)VDD Supply Current-active: 15mA max; (3)Standby Current-TTL: 1.8 mA max; (4)Standby Current-CMOS: 25 A typ and 50 A max; (5)Input Leakage Current: ±1 A; (6)Output Leakage Current: ±1 A; (7)Input Low Voltage: -0.3 V min and 0.8V max; (8)Input High Voltage: 2.0V to VDD + 0.3 V.