FLU35ZM

Features:

・High Output Power: P1dB=35.5dBm(typ.)
・High Gain: G1dB=11.5dB(typ.)
・Low Cost Plastic(SMT) Package
・Tape and Reel Available


Specifications

Item	Symbol	Rating	Unit
Drain-Source Voltage	VDS	15	V
Gate-Source Voltage	VGS	-5	V
Total Power Dissipation	PT	20.8	W
Storage Temperature	Tstg	-55 to +175	°C
Channel Temperature	Tch	+175	°C

Description

The FLU35ZM is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications.
Eudyna's stringent Quality Assurance Program of FLU35ZM assures the highest reliability and consistent performance.