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FLU10XM

Features: • High Output Power: P1dB=29.5dBm (Typ.)• High Gain: G1dB=14.5dB (Typ.)• High PAE: add=47% (Typ.)• Hermetic Metal/Ceramic (SMT) Package• Tape and Reel AvailableSpecifications Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V ...

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SeekIC No. : 004342118 Detail

FLU10XM: Features: • High Output Power: P1dB=29.5dBm (Typ.)• High Gain: G1dB=14.5dB (Typ.)• High PAE: add=47% (Typ.)• Hermetic Metal/Ceramic (SMT) Package• Tape and Reel Availab...

FLU10XM Data Sheet

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Part Number:
FLU10XM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• High Output Power: P1dB=29.5dBm (Typ.)
• High Gain: G1dB=14.5dB (Typ.)
• High PAE: add=47% (Typ.)
• Hermetic Metal/Ceramic (SMT) Package
• Tape and Reel Available


Specifications

Item Symbol Condition Rating Unit
Drain-Source Voltage VDS   15 V
Gate-Source Voltage VGS   -5 V
Total Power Dissipation PT
 Tc = 25°C 4.16 W
Storage Temperature Tstg   -65 to +175 °C
Channel Temperature Tch   +175 °C

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistence of 400.
3. The operating channel temperature (Tch) should not exceed 145°C.




Description

The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications.

Fujitsu's stringent Quality Assurance Program of FLU10XM assures the highest reliability and consistent performance.




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