FLM8596-4F Selling Leads, Price trend, FLM8596-4F DataSheet download, circuit diagram from SeekIC.com

Features: • High Output Power: P1dB = 36.0dBm (Typ.)• High Gain: G1dB = 7.5dB (Typ.)• High PAE: add = 29% (Typ.)• Low IM3 = -45dBc@Po = 25.5dBm• Broad Band: 8.5 ~ 9.6GHz• Impedance Matched Zin/Zout = 50• Hermetically SealedSpecifications Item Symbol ...

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SeekIC No. : 004342109 Detail

FLM8596-4F: Features: • High Output Power: P1dB = 36.0dBm (Typ.)• High Gain: G1dB = 7.5dB (Typ.)• High PAE: add = 29% (Typ.)• Low IM3 = -45dBc@Po = 25.5dBm• Broad Band: 8.5 ~ 9.6GH...

FLM8596-4F Data Sheet

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Part Number:: FLM8596-4F
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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FLM8596-12F evaluate
Features: • High Output Power: P1dB = 36.0dBm (Typ.)• High Gain: G1dB = 6.5dB (Typ.)&#...
FLM8596-15F evaluate
Features: ・High Output Power: P1dB=42.0dBm(Typ.)・High Gain: G1dB=7.5dB(Typ.)・...
FLM8596-8F evaluate
Features: • High Output Power: P1dB = 39.0dBm (Typ.)• High Gain: G1dB = 7.5dB (Typ.)&#...

Product Details

Description

Features:

• High Output Power: P1dB = 36.0dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: add = 29% (Typ.)
• Low IM3 = -45dBc@Po = 25.5dBm
• Broad Band: 8.5 ~ 9.6GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed

Specifications

Item	Symbol	Condition	Rating	Unit
Drain-Source Voltage	V_DS		15	V
Gate-Source Voltage	V_GS		-5	V
Total Power Dissipation	P_T	Tc = 25°C	25.0	W
Storage Temperature	T_stg		-65 to +175	°C
Channel Temperature	T_ch		+175	°C

Description

The FLM8596-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna's stringent Quality Assurance Program of FLM8596-4F assures the highest reliability and consistent performance.

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FLM8596-4F

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