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FLM7785-6F

Features: • High Output Power: P1dB = 38.5dBm (Typ.)• High Gain: G1dB = 8.5dB (Typ.)• High PAE: add = 31% (Typ.)• Low IM3 = -46dBc@Po = 27.5dBm• Broad Band: 7.7 ~ 8.5GHz• Impedance Matched Zin/Zout = 50• Hermetically SealedSpecifications Item Sym...

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SeekIC No. : 004342106 Detail

FLM7785-6F: Features: • High Output Power: P1dB = 38.5dBm (Typ.)• High Gain: G1dB = 8.5dB (Typ.)• High PAE: add = 31% (Typ.)• Low IM3 = -46dBc@Po = 27.5dBm• Broad Band: 7.7 ~ 8.5GH...

FLM7785-6F Data Sheet

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Part Number:
FLM7785-6F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power: P1dB = 38.5dBm (Typ.)
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: add = 31% (Typ.)
• Low IM3 = -46dBc@Po = 27.5dBm
• Broad Band: 7.7 ~ 8.5GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed


Specifications

Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
31.2
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.8 mA respectively with gate resistance of 100.




Description

The FLM7785-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna's stringent Quality Assurance Program of FLM7785-6F assures the highest reliability and consistent performance.


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