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FLM5972-12F

Features: • High Output Power: P1dB = 41.5dBm (Typ.)• High Gain: G1dB = 9.5dB (Typ.)• High PAE: add = 37% (Typ.)• Low IM3 = -45dBc@Po = 30.5dBm• Broad Band: 5.9 ~ 7.2GHz• Impedance Matched Zin/Zout = 50Ω• Hermetically Sealed PackageSpecifications ...

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SeekIC No. : 004342098 Detail

FLM5972-12F: Features: • High Output Power: P1dB = 41.5dBm (Typ.)• High Gain: G1dB = 9.5dB (Typ.)• High PAE: add = 37% (Typ.)• Low IM3 = -45dBc@Po = 30.5dBm• Broad Band: 5.9 ~ 7.2GH...

FLM5972-12F Data Sheet

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Part Number:
FLM5972-12F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power: P1dB = 41.5dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: add = 37% (Typ.)
• Low IM3 = -45dBc@Po = 30.5dBm
• Broad Band: 5.9 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package


Specifications

Item Symbol Condition Rating Unit
Drain-Source Voltage VDS   15 V
Gate-Source Voltage VGS   -5 V
Total Power Dissipation PT Tc = 25°C 57.6 W
Storage Temperature Tstg   -65 to +175
Channel Temperature Tch   175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with gate resistance of 50Ω.


Description

The FLM5972-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna's stringent Quality Assurance Program FLM5972-12F assures the highest reliability and consistent performance.


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