FLM5964-8F Selling Leads, Price trend, FLM5964-8F DataSheet download, circuit diagram from SeekIC.com

Features: • High Output Power: P1dB = 39.5dBm (Typ.)• High Gain: G1dB = 10.0dB (Typ.)• High PAE: add = 37% (Typ.)• Low IM3 = -46dBc@Po = 28.5dBm• Broad Band: 5.9 ~ 6.4GHz• Impedance Matched Zin/Zout = 50Ω• Hermetically Sealed PackageSpecifications ...

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SeekIC No. : 004342097 Detail

FLM5964-8F: Features: • High Output Power: P1dB = 39.5dBm (Typ.)• High Gain: G1dB = 10.0dB (Typ.)• High PAE: add = 37% (Typ.)• Low IM3 = -46dBc@Po = 28.5dBm• Broad Band: 5.9 ~ 6.4G...

FLM5964-8F Data Sheet

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Part Number:: FLM5964-8F
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Recent History
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Features: ・High Output Power: P1dB=46.5dBm(Typ.)・High Gain: G1dB=8.5dB(Typ.)・...
FLM5964-12F evaluate
Features: • High Output Power: P1dB = 41.5dBm (Typ.)• High Gain: G1dB = 10.0dB (Typ.)&...
FLM5964-18F evaluate
Features: • High Output Power: P1dB = 43.0dBm (Typ.)• High Gain: G1dB = 10.0dB (Typ.)&...

Product Details

Description

Features:

• High Output Power: P_1dB = 39.5dBm (Typ.)
• High Gain: G_1dB = 10.0dB (Typ.)
• High PAE: _add= 37% (Typ.)
• Low IM₃ = -46dBc@Po = 28.5dBm
• Broad Band: 5.9 ~ 6.4GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package

Specifications

Item	Symbol	Condition	Rating	Unit
Drain-Source Voltage	V_DS		15	V
Gate-Source Voltage	V_GS		-5	V
Total Power Dissipation	P_T	Tc = 25°C	42.8	W
Storage Temperature	T_stg		-65 to +175	°C
Channel Temperature	T_ch		175	°C

Description

The FLM5964-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

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FLM5964-8F

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