Features: ・High Output Power: P1dB=45.5dBm(Typ.)・High Gain: G1dB=9.0dB(Typ.)・High PAE: add=36%(Typ.)・Broad Band: 5.9~6.4GHz・Impedance Matched Zin/Zout = 50Ω・Hermetically Sealed PackageSpecifications Item Symbol Rating Unit Drain-S...
FLM5964-35F: Features: ・High Output Power: P1dB=45.5dBm(Typ.)・High Gain: G1dB=9.0dB(Typ.)・High PAE: add=36%(Typ.)・Broad Band: 5.9~6.4GHz・Impedance Matched Zin/Zout = 50Ω&...
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Features: ・High Output Power: P1dB=46.5dBm(Typ.)・High Gain: G1dB=8.5dB(Typ.)・...
Features: • High Output Power: P1dB = 41.5dBm (Typ.)• High Gain: G1dB = 10.0dB (Typ.)&...
Features: • High Output Power: P1dB = 43.0dBm (Typ.)• High Gain: G1dB = 10.0dB (Typ.)&...
Item |
Symbol |
Rating |
Unit |
Drain-Source Voltage |
VDS |
15 |
V |
Gate-Source Voltage |
VGS |
-5 |
V |
Total Power Dissipation |
PT |
115 |
W |
Storage Temperature |
Tstg |
-65 to +175 |
°C |
Channel Temperature |
Tch |
175 |
°C |
The FLM5964-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.