FLL800IQ-2C

Features:

• Push-Pull Configuration
• High Power Output: 80W (Typ.)
• High PAE: 50% (Typ.)
• Broad Frequency Range: 2100 to 2200 MHz.
• Suitable for class AB operation.


Application

• Solid State Base-Station Power Amplifier.
• W-CDMA and IMT 2000 Communication Systems.


Specifications

Item	Symbol	Condition	Rating	Unit
Drain-Source Voltage	VDS		15	V
Gate-Source Voltage	VGS		-5	V
Total Power Dissipation	PT	Tc = 25°C	136	W
Storage Temperature	Tstg		-65 to +175	°C
Channel Temperature	Tch		+175	°C

Description

The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. FLL800IQ-2C is uniquely suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use.