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FLK207MH-14

Features: • High Output Power: P1dB = 32.5dBm(Typ.)• High Gain: G1dB = 6.0dB(Typ.)• High PAE: add = 27%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifications Item Symbol Condition Rating Unit Drain-Source Voltage VDS 1...

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SeekIC No. : 004342070 Detail

FLK207MH-14: Features: • High Output Power: P1dB = 32.5dBm(Typ.)• High Gain: G1dB = 6.0dB(Typ.)• High PAE: add = 27%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifi...

FLK207MH-14 Data Sheet

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Part Number:
FLK207MH-14
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power: P1dB = 32.5dBm(Typ.)
• High Gain: G1dB = 6.0dB(Typ.)
• High PAE: add = 27%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package


Specifications

Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
12.5
W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with gate resistance of 250.
3. The operating channel temperature (Tch) should not exceed 145°C.


Description

The FLK207MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu's stringent Quality Assurance Program of FLK207MH-14 assures the highest reliability and consistent performance.


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