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FLC257MH-8

Features: • High Output Power: P1dB = 34.0dBm(Typ.)• High Gain: G1dB = 8.0dB(Typ.)• High PAE: add = 35%(Typ.)• ProvenReliability• Hermetic Metal/Ceramic PackageSpecifications Item Symbol Condition Rating Unit Drain-Source Voltage VDS ...

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SeekIC No. : 004341982 Detail

FLC257MH-8: Features: • High Output Power: P1dB = 34.0dBm(Typ.)• High Gain: G1dB = 8.0dB(Typ.)• High PAE: add = 35%(Typ.)• ProvenReliability• Hermetic Metal/Ceramic PackageSpecific...

FLC257MH-8 Data Sheet

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Part Number:
FLC257MH-8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Description



Features:

• High Output Power: P1dB = 34.0dBm(Typ.)
• High Gain: G1dB = 8.0dB(Typ.)
• High PAE: add = 35%(Typ.)
• ProvenReliability
• Hermetic Metal/Ceramic Package


Specifications

Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
15
W
Storage Temperature
Tstg
-65to+175
°C
Channel Temperature
Tch
175
°C



Description

The FLC257MH-8 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu's stringent Quality Assurance Program FLC257MH-8 assures the highest reliability and consistent performance.




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