Position: Home  > All Categories> Integrated Circuits (ICs) > FLC257MH-6

FLC257MH-6

Features: • High Output Power: P1dB = 34.0dBm(Typ.)• High Gain: G1dB = 9.0dB(Typ.)• High PAE: add = 36%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifications Item Symbol Condition Rating Unit Drain-Source Voltage VDS 1...

product image

FLC257MH-6 Picture
See larger image
SeekIC No. : 004341981 Detail

FLC257MH-6: Features: • High Output Power: P1dB = 34.0dBm(Typ.)• High Gain: G1dB = 9.0dB(Typ.)• High PAE: add = 36%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifi...

FLC257MH-6 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FLC257MH-6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/13

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• High Output Power: P1dB = 34.0dBm(Typ.)
• High Gain: G1dB = 9.0dB(Typ.)
• High PAE: add = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package


Specifications

Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
15
W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with gate resistance of 200.
3. The operating channel temperature (Tch) should not exceed 145°C.


Description

The FLC257MH-6 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu's stringent Quality Assurance Program FLC257MH-6 assures the highest reliability and consistent performance.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Test Equipment
TOP853
TOP2005
Crystals and Oscillators
WT325BI0030.000000
2SB49
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Filters
PICO2205A
PICO2204A
View more