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FLC257MH-6

Features: • High Output Power: P1dB = 34.0dBm(Typ.)• High Gain: G1dB = 9.0dB(Typ.)• High PAE: add = 36%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifications Item Symbol Condition Rating Unit Drain-Source Voltage VDS 1...

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SeekIC No. : 004341981 Detail

FLC257MH-6: Features: • High Output Power: P1dB = 34.0dBm(Typ.)• High Gain: G1dB = 9.0dB(Typ.)• High PAE: add = 36%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifi...

FLC257MH-6 Data Sheet

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Part Number:
FLC257MH-6
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power: P1dB = 34.0dBm(Typ.)
• High Gain: G1dB = 9.0dB(Typ.)
• High PAE: add = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package


Specifications

Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
15
W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with gate resistance of 200.
3. The operating channel temperature (Tch) should not exceed 145°C.


Description

The FLC257MH-6 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu's stringent Quality Assurance Program FLC257MH-6 assures the highest reliability and consistent performance.


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