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SeekIC No. : 00223755 Detail

FJNS4209RTA: Transistors Switching (Resistor Biased) PNP Si Transistor Epitaxial

FJNS4209RTA Data Sheet

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Part Number:: FJNS4209RTA
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/11/21

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What is this?

FJNS3201R evaluate
Application* Switching circuit, Inverter, Interface circuit, Driver Circuit* Built in bias Resisto...
FJNS3201RBU evaluate
Transistors Switching (Resistor Biased) 50V/100mA/4.7K 4.7K
FJNS3201RBU_Q evaluate
Transistors Switching (Resistor Biased) 50V/100mA/4.7K 4.7K

Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	PNP
Typical Input Resistor :	4.7 KOhms	Mounting Style :	Through Hole
Package / Case :	TO-92-3	Collector- Emitter Voltage VCEO Max :	40 V
Continuous Collector Current :	- 0.1 A	Peak DC Collector Current :	100 mA
Power Dissipation :	0.3 W	Maximum Operating Temperature :	+ 150 C
Packaging :	Ammo

Description

Typical Resistor Ratio :
Maximum Operating Frequency :
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Typical Input Resistor : 4.7 KOhms
Transistor Polarity : PNP
Peak DC Collector Current : 100 mA
Configuration : Single
Continuous Collector Current : - 0.1 A
Collector- Emitter Voltage VCEO Max : 40 V
Power Dissipation : 0.3 W
Packaging : Ammo
Package / Case : TO-92-3

Parameters:

Technical/Catalog Information	FJNS4209RTA
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	100mA
Power - Max	300mW
Resistor - Base (R1) (Ohms)	4.7K
Resistor - Emitter Base (R2) (Ohms)	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
Frequency - Transition	200MHz
Mounting Type	Through Hole
Package / Case	TO-92S
Packaging	Tape & Box (TB)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FJNS4209RTA FJNS4209RTA

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