Transistors Switching (Resistor Biased) NPN Si Transistor Epitaxial
FJNS3215RTA: Transistors Switching (Resistor Biased) NPN Si Transistor Epitaxial
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Configuration : | Single | Transistor Polarity : | NPN | ||
Typical Input Resistor : | 2.2 KOhms | Typical Resistor Ratio : | 0.22 | ||
Mounting Style : | Through Hole | Package / Case : | TO-92-3 | ||
Collector- Emitter Voltage VCEO Max : | 50 V | Continuous Collector Current : | 0.1 A | ||
Peak DC Collector Current : | 100 mA | Power Dissipation : | 0.3 W | ||
Maximum Operating Temperature : | + 150 C | Packaging : | Ammo |
Technical/Catalog Information | FJNS3215RTA |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Pre-Biased |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 300mW |
Resistor - Base (R1) (Ohms) | 2.2K |
Resistor - Emitter Base (R2) (Ohms) | 22K |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500A, 10mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 10mA, 5V |
Frequency - Transition | 250MHz |
Mounting Type | Through Hole |
Package / Case | TO-92S |
Packaging | Tape & Box (TB) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FJNS3215RTA FJNS3215RTA |