Transistors Switching (Resistor Biased) NPN Si Transistor Epitaxial
FJNS3211RTA: Transistors Switching (Resistor Biased) NPN Si Transistor Epitaxial
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Configuration : | Single | Transistor Polarity : | NPN |
Typical Input Resistor : | 22 KOhms | Mounting Style : | Through Hole |
Package / Case : | TO-92-3 | Collector- Emitter Voltage VCEO Max : | 40 V |
Continuous Collector Current : | 0.1 A | Peak DC Collector Current : | 100 mA |
Power Dissipation : | 0.3 W | Maximum Operating Temperature : | + 150 C |
Packaging : | Ammo |
Technical/Catalog Information | FJNS3211RTA |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Pre-Biased |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 300mW |
Resistor - Base (R1) (Ohms) | 22K |
Resistor - Emitter Base (R2) (Ohms) | - |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Frequency - Transition | 250MHz |
Mounting Type | Through Hole |
Package / Case | TO-92S |
Packaging | Tape & Box (TB) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FJNS3211RTA FJNS3211RTA |