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FJN965TA

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00212324 Detail

FJN965TA: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

FJN965TA Data Sheet

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Part Number:
FJN965TA
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 230 Configuration : Single
Maximum Operating Frequency : 150 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo    

Description

Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92-3 Kinked Lead
Emitter- Base Voltage VEBO : 7 V
Packaging : Ammo
Maximum DC Collector Current : 5 A
Maximum Operating Frequency : 150 MHz
DC Collector/Base Gain hfe Min : 230


Parameters:

Technical/Catalog InformationFJN965TA
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)5A
Power - Max750mW
DC Current Gain (hFE) (Min) @ Ic, Vce230 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 3A
Frequency - Transition150MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FJN965TA
FJN965TA



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