Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
FJN965TA: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 20 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 5 A |
DC Collector/Base Gain hfe Min : | 230 | Configuration : | Single |
Maximum Operating Frequency : | 150 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92-3 Kinked Lead |
Packaging : | Ammo |
Technical/Catalog Information | FJN965TA |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Current - Collector (Ic) (Max) | 5A |
Power - Max | 750mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 230 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 3A |
Frequency - Transition | 150MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Tape & Box (TB) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FJN965TA FJN965TA |