Application* Switching circuit, Inverter, Interface circuit, Driver Circuit* Built in bias Resistor (R1 =4.7K , R2 =4.7K )* Complement to FJN3301RSpecifications Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -5...
FJN4301R: Application* Switching circuit, Inverter, Interface circuit, Driver Circuit* Built in bias Resistor (R1 =4.7K , R2 =4.7K )* Complement to FJN3301RSpecifications Symbol Parameter Value ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.04 - .13 / Piece
Transistors Switching (Resistor Biased) PNP Si Transistor Epitaxial
Symbol |
Parameter |
Value |
Units |
VCBO |
Collector-Base Voltage |
-50 |
V |
VCEO |
Collector-Emitter Voltage |
-50 |
V |
VEBO |
Emitter-Base Voltage |
-10 |
V |
IC |
Collector Current |
-100 |
mA |
PC |
Collector Power Dissipation |
300 |
mW |
TJ |
Junction Temperature |
150 |
°C |
TSTG |
Storage Temperature |
-55 ~ 150 |
°C |