ApplicationSwitching circuit, Inverter, Interface circuit, Driver CircuitBuilt in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJN4301RSpecifications Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Volta...
FJN3301R: ApplicationSwitching circuit, Inverter, Interface circuit, Driver CircuitBuilt in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJN4301RSpecifications Symbol Parameter Value Units VCBO ...
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US $.03 - .05 / Piece
Transistors Switching (Resistor Biased) 50V/100mA/4.7K 4.7K
US $.02 - .02 / Piece
Transistors Switching (Resistor Biased) NPN Si Transistor Epitaxial
Symbol | Parameter | Value | Units |
VCBO | Collector-Base Voltage | 50 | V |
VCEO | Collector-Emitter Voltage | 50 | V |
VEBO | Emitter-Base Voltage | 10 | V |
IC | Collector Current | 100 | mA |
PC | Collector Power Dissipation | 300 | mW |
TJ | Junction Temperature | 150 | |
TSTG | Storage Temperature | -55 ~ 150 |