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FJE3303H2

Transistors Bipolar (BJT) Silicon Transistor NPN Sil Xstr Planar

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SeekIC No. : 00212180 Detail

FJE3303H2: Transistors Bipolar (BJT) Silicon Transistor NPN Sil Xstr Planar

FJE3303H2 Data Sheet

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Part Number:
FJE3303H2
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 14 Configuration : Single
Maximum Operating Frequency : 4 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
Package / Case : TO-126
Emitter- Base Voltage VEBO : 9 V
Maximum Operating Frequency : 4 MHz
DC Collector/Base Gain hfe Min : 14


Parameters:

Technical/Catalog InformationFJE3303H2
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)1.5A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 500mA
Frequency - Transition4MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FJE3303H2
FJE3303H2



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