Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
FJD3076TM: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 32 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 2 A |
DC Collector/Base Gain hfe Min : | 120 | Configuration : | Single |
Maximum Operating Frequency : | 100 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | TO-252 |
Packaging : | Reel |
Technical/Catalog Information | FJD3076TM |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 32V |
Current - Collector (Ic) (Max) | 2A |
Power - Max | 10W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 500mA, 3V |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
Frequency - Transition | 100MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FJD3076TM FJD3076TM |