Features: • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)• Low Collector-Emitter Saturation Voltage• High Collector-Emitter Sustaining Voltage• Monolithic Construction with Built-in Base-Emitter Shunt Resistors• Industrial UseSpecifications Symbol Param...
FJB102: Features: • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)• Low Collector-Emitter Saturation Voltage• High Collector-Emitter Sustaining Voltage• Monolithic Constructi...
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Symbol | Parameter |
Value |
Unit | |
VCBO |
Collector-Base Voltage |
100 | V | |
VCEO |
Collector-Emitter Voltage |
100 | V | |
VEBO |
Emitter-Base Voltage |
5 | V | |
IC |
Collector Current (DC) |
8 | A | |
ICP | Collector Current (Pulse) |
15 |
A | |
IB | Base Current (DC) |
1 |
A | |
PC |
Collector Dissipation (TC=25°C) |
80 | W | |
TJ | Junction Temperature |
150 |
| |
TSTG |
Storage Temperature |
- 65 ~ 150 |