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FJA4313RTU

Transistors Bipolar (BJT) NPN Epitaxial Silicon Transistor

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SeekIC No. : 00208926 Detail

FJA4313RTU: Transistors Bipolar (BJT) NPN Epitaxial Silicon Transistor

FJA4313RTU Data Sheet

floor Price/Ceiling Price

US $ .54~.8 / Piece | Get Latest Price
Part Number:
FJA4313RTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~450
  • 450~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $.8
  • $.7
  • $.58
  • $.54
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 250 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 17 A
DC Collector/Base Gain hfe Min : 55 Configuration : Single
Maximum Operating Frequency : 30 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-3P
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum Operating Frequency : 30 MHz
Collector- Emitter Voltage VCEO Max : 250 V
DC Collector/Base Gain hfe Min : 55
Package / Case : TO-3P
Maximum DC Collector Current : 17 A


Parameters:

Technical/Catalog InformationFJA4313RTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)230V
Current - Collector (Ic) (Max)10A
Power - Max130W
DC Current Gain (hFE) (Min) @ Ic, Vce55 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic500mV @ 500mA, 5A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-3P
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FJA4313RTU
FJA4313RTU



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