Transistors Bipolar (BJT) NPN Epitaxial Silicon Transistor
FJA4313RTU: Transistors Bipolar (BJT) NPN Epitaxial Silicon Transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 250 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 17 A |
DC Collector/Base Gain hfe Min : | 55 | Configuration : | Single |
Maximum Operating Frequency : | 30 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-3P |
Packaging : | Tube |
Technical/Catalog Information | FJA4313RTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 230V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 130W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 3A, 4V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
Frequency - Transition | 30MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-3P |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FJA4313RTU FJA4313RTU |