FJA4310OTU, US $ .61-.85 , Fairchild Semiconductor, FJA4310OTU DataSheet download, circuit diagram from SeekIC.com

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FJA4310OTU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

FJA4310OTU Data Sheet

US $ .61~.85 / Piece | Get Latest Price

Part Number:: FJA4310OTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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FJA4210 evaluate
Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage -200 V ...
FJA4210OTU evaluate
US $.61 - .94 / Piece

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
FJA4210RTU evaluate
US $.65 - 1.07 / Piece

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	140 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	10 A
DC Collector/Base Gain hfe Min :	50	Configuration :	Single
Maximum Operating Frequency :	30 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-3P
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Packaging : Tube
DC Collector/Base Gain hfe Min : 50
Maximum Operating Frequency : 30 MHz
Maximum DC Collector Current : 10 A
Collector- Emitter Voltage VCEO Max : 140 V
Package / Case : TO-3P

Parameters:

Technical/Catalog Information	FJA4310OTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	10A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	500mV @ 500mA, 5A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FJA4310OTU FJA4310OTU

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FJA4310OTU

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