FJA4213RTU, US $ .63-.65 , Fairchild Semiconductor, FJA4213RTU DataSheet download, circuit diagram from SeekIC.com

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FJA4213RTU: Transistors Bipolar (BJT) PNP Epitaxial Silicon Transistor

FJA4213RTU Data Sheet

US $ .63~.65 / Piece | Get Latest Price

Part Number:: FJA4213RTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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0~720
720~1000

Unit Price
$.65
$.63

Processing time
15 Days
15 Days

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Upload time: 2024/5/22

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What is this?

FJA4210 evaluate
Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage -200 V ...
FJA4210OTU evaluate
US $.61 - .94 / Piece

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
FJA4210RTU evaluate
US $.65 - 1.07 / Piece

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	230 V
Emitter- Base Voltage VEBO :	- 5 V	Maximum DC Collector Current :	15 A
DC Collector/Base Gain hfe Min :	55	Configuration :	Single
Maximum Operating Frequency :	30 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-3P
Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 15 A
Collector- Emitter Voltage VCEO Max : 230 V
Maximum Operating Frequency : 30 MHz
DC Collector/Base Gain hfe Min : 55
Package / Case : TO-3P

Parameters:

Technical/Catalog Information	FJA4213RTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	230V
Current - Collector (Ic) (Max)	15A
Power - Max	130W
DC Current Gain (hFE) (Min) @ Ic, Vce	55 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FJA4213RTU FJA4213RTU

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FJA4213RTU

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