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FJA3835TU

Transistors Bipolar (BJT) NPN Silicon

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FJA3835TU: Transistors Bipolar (BJT) NPN Silicon

FJA3835TU Data Sheet

floor Price/Ceiling Price

US $ .38~.76 / Piece | Get Latest Price
Part Number:
FJA3835TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.76
  • $.63
  • $.51
  • $.38
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 120 V
Emitter- Base Voltage VEBO : 8 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 120 Configuration : Single
Maximum Operating Frequency : 4 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-3P
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 8 V
DC Collector/Base Gain hfe Min : 120
Collector- Emitter Voltage VCEO Max : 120 V
Maximum Operating Frequency : 4 MHz
Package / Case : TO-3P


Parameters:

Technical/Catalog InformationFJA3835TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic500mV @ 300mA, 3A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-3P
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FJA3835TU
FJA3835TU



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