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FII30-12E

IGBT Transistors 30 Amps 1200V

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SeekIC No. : 00142716 Detail

FII30-12E: IGBT Transistors 30 Amps 1200V

FII30-12E Data Sheet

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Part Number:
FII30-12E
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Dual Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : ISOPLUS i5-Pac-5 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Dual
Package / Case : ISOPLUS i5-Pac-5


Parameters:

Technical/Catalog InformationFII30-12E
VendorIXYS
CategoryDiscrete Semiconductor Products
ConfigurationHalf Bridge
InputStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)33A
Power - Max150W
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 20A
Current - Collector Cutoff (Max)200A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce*
Mounting TypeThrough Hole
Package / CaseISOPLUS i4-PAC?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FII30 12E
FII3012E



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