FGW15N40A

Gate-Source Breakdown Voltage :
Resistance Drain-Source RDS (on) :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 8 A
Package / Case : TSSOP-8
Drain-Source Breakdown Voltage : 400 V
Configuration : Single Quad Collector Triple Emitter


Features:

` VCE(SAT) = 4.4V at IC=150A
` tfl = 1.1s, td(OFF)I = 0.46s
` 2kV ESD Protected
` High Peak Current Density
` TSSOP - 8 package, small footprint, low profile 1mm thick)


Application

· Camera Strobe


Specifications

Symbol	Parameter	Ratings	Units
BVCES	Collector to Emitter Breakdown Voltage	400	V
IC	Collector Current Continuous(DC)	8	A
ICP	Collector Current Pulsed(100s)	150	A
VGES	Gate to Emitter Voltage Continuous(DC)	±6	V
VGEP	Gate to Emitter Voltage Pulsed	±8	V
PD	Power Dissipation Total TC = 25°C	1.25	W
TJ	Operating Junction Temperature Range	-40 to 150	°C
TSTG	Storage Junction Temperature Range	-40 to 150	°C
ESD	Electrostatic Discharge Voltage at 100pF, 1500	2	kV

Description

This N-Channel IGBT FGW15N40A is a MOS gated, logic level device hich has been especially tailored for camera flash applications here board space is a premium. FGW15N40A has een designed to offer exceptional power dissipation in a ery small footprint for applications where bigger, more expensive ackages are impractical. The gate is ESD protected ith a zener diode.