FGS15N40L Selling Leads, Price trend, FGS15N40L DataSheet download, circuit diagram from SeekIC.com

Features: • High Input Impedance• High Peak Current Capability (130A)• Easy Gate DriveApplication• Strobe FlashSpecifications Symbol Description FGS15N40L Units VCES Collector-Emitter Voltage 400 V VGES Gate-Emitter Voltage ±6 V ICM ...

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SeekIC No. : 004341491 Detail

FGS15N40L: Features: • High Input Impedance• High Peak Current Capability (130A)• Easy Gate DriveApplication• Strobe FlashSpecifications Symbol Description FGS15N40L U...

FGS15N40L Data Sheet

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Part Number:: FGS15N40L
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/19

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FGS15N40LTU evaluate
IGBT Transistors
FGS15N40LTF evaluate
IGBT Transistors N-Ch/400V/130A

Product Details

Description

Features:

• High Input Impedance
• High Peak Current Capability (130A)
• Easy Gate Drive

Application

• Strobe Flash

Specifications

Symbol	Description	FGS15N40L	Units
V_CES	Collector-Emitter Voltage	400	V
V_GES	Gate-Emitter Voltage	±6	V
I_{CM (1)}	Pulsed Collector Current	130	A
P_C	Maximum Power Dissipation @ Ta = 25°C	2.0	W
T_J	Operating Junction Temperature	-40 to +150	°C
T_stg	Storage Temperature Range	-40 to +150	°C
T_L	Maximum Lead Temp. for soldering PurPoses from case for 5 secnds	300	°C

Description

Insulated Gate Bipolar Transistors(IGBTs)FGS15N40L with trench ate structure have superior performance in conductance nd switching to planar gate structure and also have wide oise immunity. These devices are well suitable for trobe application

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FGS15N40L

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