FGPF90N30

IGBT Transistors 300V 90A PDP IGBT

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FGPF90N30: IGBT Transistors 300V 90A PDP IGBT

floor Price/Ceiling Price

US $ .78~1.12 / Piece | Get Latest Price
Part Number:
FGPF90N30
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.12
  • $.89
  • $.82
  • $.78
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 300 V
Collector-Emitter Saturation Voltage : 1.55 V Maximum Gate Emitter Voltage : +/- 30 V
Gate-Emitter Leakage Current : +/- 250 nA Power Dissipation : 56.8 W
Maximum Operating Temperature : + 150 C Package / Case : TO-220F-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 30 V
Collector- Emitter Voltage VCEO Max : 300 V
Gate-Emitter Leakage Current : +/- 250 nA
Collector-Emitter Saturation Voltage : 1.55 V
Package / Case : TO-220F-3
Power Dissipation : 56.8 W


Parameters:

Technical/Catalog InformationFGPF90N30
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)-
Vce(on) (Max) @ Vge, Ic1.55V @ 15V, 30A
Power - Max56.8W
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FGPF90N30
FGPF90N30



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