IGBT Transistors 600V 7A RUF IGBT CO-PAK
FGPF7N60RUFDTU: IGBT Transistors 600V 7A RUF IGBT CO-PAK
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 1.95 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 41 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220F-3 |
Packaging : | Tube |
Technical/Catalog Information | FGPF7N60RUFDTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 14A |
Vce(on) (Max) @ Vge, Ic | - |
Power - Max | - |
Mounting Type | Through Hole |
Package / Case | TO-220F |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FGPF7N60RUFDTU FGPF7N60RUFDTU |