IGBT Transistors 330V 50A 4th Gen PDP IGBT
FGPF4533: IGBT Transistors 330V 50A 4th Gen PDP IGBT
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Collector- Emitter Voltage VCEO Max : | 330 V | Collector-Emitter Saturation Voltage : | 1.15 V |
Maximum Gate Emitter Voltage : | 30 V | Continuous Collector Current at 25 C : | 200 A |
Gate-Emitter Leakage Current : | 400 nA | Power Dissipation : | 28.4 W |
Maximum Operating Temperature : | + 125 C | Package / Case : | TO-220F |
Packaging : | Tube |