IGBT Transistors 300V 30A PDP Trench IGBT
FGPF30N30TTU: IGBT Transistors 300V 30A PDP Trench IGBT
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 300 V | ||
Maximum Gate Emitter Voltage : | +/- 30 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220F-3 | Packaging : | Tube |
Technical/Catalog Information | FGPF30N30TTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Current - Collector (Ic) (Max) | 80A |
Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 10A |
Power - Max | 44.6W |
Mounting Type | Through Hole |
Package / Case | TO-220F |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FGPF30N30TTU FGPF30N30TTU |