FGPF30N30, US $ .78-1.39 , Fairchild Semiconductor, FGPF30N30 DataSheet download, circuit diagram from SeekIC.com

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FGPF30N30: IGBT Transistors 300V 30A PDP IGBT

FGPF30N30 Data Sheet

US $ .78~1.39 / Piece | Get Latest Price

Part Number:: FGPF30N30
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/20

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	300 V
Collector-Emitter Saturation Voltage :	1.5 V	Maximum Gate Emitter Voltage :	+/- 30 V
Gate-Emitter Leakage Current :	+/- 250 nA	Power Dissipation :	46 W
Maximum Operating Temperature :	+ 150 C	Package / Case :	TO-220F-3
Packaging :	Tube

Description

Continuous Collector Current at 25 C :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 30 V
Collector-Emitter Saturation Voltage : 1.5 V
Collector- Emitter Voltage VCEO Max : 300 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-220F-3
Power Dissipation : 46 W

Parameters:

Technical/Catalog Information	FGPF30N30
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	80A
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 10A
Power - Max	46W
Mounting Type	Through Hole
Package / Case	TO-220F
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGPF30N30 FGPF30N30

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FGPF30N30

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