IGBT Transistors 600V 10A NPT IGBT
FGP10N60UNDF: IGBT Transistors 600V 10A NPT IGBT
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.3 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 20 A | Gate-Emitter Leakage Current : | +/- 10 uA | ||
Power Dissipation : | 139 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220 | Packaging : | Tube |