IGBT Transistors Sgl 600V N-Ch
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 1.9 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 75 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 625 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Symbol |
Parameter |
Ratings |
Units |
BVCES |
Collector to Emitter Breakdown Voltage |
600 |
V |
IC25 |
Collector Current Continuous, TC = 25°C |
75 |
A |
IC110 |
Collector Current Continuous, TC = 110°C |
75 |
A |
ICM |
Collector Current Pulsed (Note 1) |
320 |
A |
VGES |
Gate to Emitter Voltage Continuous |
±20 |
V |
VGEM |
Gate to Emitter Voltage Pulsed |
±30 |
V |
SSOA |
Switching Safe Operating Area at TJ = 150°C, Figure 2 |
200A at 600V |
|
EAS |
Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V |
700 |
mJ |
PD |
Power Dissipation Total TC = 25°C |
625 |
W |
|
Power Dissipation Derating TC > 25°C |
5 |
W/°C |
TJ |
Operating Junction Temperature Range |
-55 to 150 |
°C |
TSTG |
Storage Junction Temperature Range |
-55 to 150 |
°C |
The FGH60N6S2 is a Low Gate Charge, Low Plateau Volt- age SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. FGH60N6S2 are ideally suited for high volt- age switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC FGH60N6S2 have been specially de- signed for:
* Power Factor Correction (PFC) circuits
* Full bridge topologies
* Half bridge topologies
* Push-Pull circuits
* Uninterruptible power supplies
* Zero voltage and zero current switching circuits