IGBT Transistors 600V/60A Field Stop IGBT ver. 2
FGH60N60SMD: IGBT Transistors 600V/60A Field Stop IGBT ver. 2
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Collector- Emitter Voltage VCEO Max : | 600 V | Collector-Emitter Saturation Voltage : | 1.9 V |
Maximum Gate Emitter Voltage : | 20 V | Continuous Collector Current at 25 C : | 120 A |
Gate-Emitter Leakage Current : | 400 nA | Power Dissipation : | 600 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247 |
Packaging : | Tube |