FGH50N6S2D

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 75 A
Power Dissipation : 463 W


Features:

• 100kHz Operation at 390V, 40A
• 200kHZ Operation at 390V, 25A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 70nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ
• Low Conduction Loss


Specifications

Symbol	Parameter	Ratings	Units
BVCES	Collector to Emitter Breakdown Voltage	600	V
IC25	Collector Current Continuous, TC = 25°C	75	A
IC110	Collector Current Continuous, TC = 110°C	60	A
ICM	Collector Current Pulsed (Note 1)	240	A
VGES	Gate to Emitter Voltage Continuous	±20	V
VGEM	Gate to Emitter Voltage Pulsed	±30	V
SSOA	Switching Safe Operating Area at TJ = 150°C, Figure 2	150A at 600V	A
EAS	Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V	480	mJ
PD	Power Dissipation Total TC = 25°C	463	W
	Power Dissipation Derating TC > 25°C	3.7	W/°C
TJ	Operating Junction Temperature Range	-55 to 150	°C
TSTG	Storage Junction Temperature Range	-55 to 150	°C

Description

The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC FGH50N6S2D shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC FGH50N6S2D have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392

Parameters:

Technical/Catalog Information	FGH50N6S2D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	75A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Power - Max	463W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGH50N6S2D FGH50N6S2D