FGH30N6S2

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Power Dissipation : 167 W
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 45 A


Features:






Specifications






Description

      The FGH30N6S2 is Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices of FGH30N6S2 shorten delay times, and reduce the power requirement of the gate drive. FGH30N6S2 is specially designed for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.SMPS II LGC devices are widely used in the fields of Power Factor Correction (PFC) circuits,full bridge topologies,half bridge topologies,push-Pull circuits,uninterruptible power supplies and zero voltage and zero current switching circuits.
      Here you can get some information about the features of FGH30N6S2. The 100kHz operation is at 390V, 14A.The 200kHZ operation is at 390V,9A.Besides,it has 600V switching SOA capability.The typical fall time is 90ns at TJ = 125oC.The low gate charge is 23 nC at V_GE = 15V.The low plateau voltage is 6.5V typical.The UIS rated is 150mJ.What's more, FGH30N6S2 has low conduction loss.
      You have to understand the maximum ratings of FGH30N6S2 at TC= 25 if you want to purchase the product.The BV_CES (Collector to Emitter Breakdown Voltage) is 600 V.The I_C25 (Collector Current Continuous,TC = 25) is 45 A.The I_C110 (Collector Current Continuous,TC = 110) is 20 A.The I_CM (Collector Current Pulsed) is 108 A.The V_GES (Gate to Emitter Voltage Continuous) is ±20 V.The V_GEM (Gate to Emitter Voltage Pulsed) is ±30 V.The SSOA (Switching Safe Operating Area at T_J = 150) is 60A at 600V.The E_AS (Pulsed Avalanche Energy, I_CE = 20A, L = 1.3mH, V_DD = 50V) is 150 mJ.The PD (Power Dissipation Total T_C = 25°C) is 167 W.The Power Dissipation Derating is 1.33 W/ at T_C > 25.The T_J (Operating Junction Temperature Range) is from -55 to 150 .The T_STG (Storage Junction Temperature Range) is from -55 to 150 .
      The following is about the electrical characteristics of FGH30N6S2 at T_J = 25.The Minimum BV_CES (Collector to Emitter Breakdown Voltage) is 600 V at I_C = 250A, V_GE = 0.The Min BV_ECS (Emitter to Collector Breakdown Voltage) is 10 V and the Max. is 25 V at I_C = 10mA, V_GE = 0.The Max. IC_ES (Collector to Emitter Leakage Current) is 100 A at V_CE = 600V,T_J = 25 and 2 mA at V_CE = 600V,T_J = 125.The Max I_GES (Gate to Emitter Leakage Current) is ±250 nA at V_GE = ± 20V.The Typical V_CE(SAT) (Collector to Emitter Saturation Voltage)  is 2.0 V and the Max is 2.5V at I_C = 12A,V_GE = 15V,TJ = 25.The Typical V_CE(SAT) (Collector to Emitter Saturation Voltage)  is 1.7 V and the Max is 2.0 V at I_C = 12A,V_GE = 15V,T_J = 125.