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FGH20N6S2D

IGBT Transistors Comp N-Ch 600V

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SeekIC No. : 00143866 Detail

FGH20N6S2D: IGBT Transistors Comp N-Ch 600V

FGH20N6S2D Data Sheet

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Part Number:
FGH20N6S2D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

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Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 28 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 125 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Power Dissipation : 125 W
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Continuous Collector Current at 25 C : 28 A
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3


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