Features: • High Current Capability• Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A• High Input ImpedanceApplication• HID Lamp Applications• Piezo Fuel Injection ApplicationsSpecifications Symbol Description FGA25N120AND Units VCES Coll...
FGD3N60LSD: Features: • High Current Capability• Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A• High Input ImpedanceApplication• HID Lamp Applications• Piezo Fuel Inject...
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Symbol |
Description |
FGA25N120AND |
Units |
VCES |
Collector-Emitter Voltage |
600 |
V |
VGES |
Gate-Emitter Voltage |
± 20 |
V |
IC |
Collector Current @ TC = 25°C |
6 |
A |
Collector Current @ TC = 100°C |
3 |
A | |
ICM (1) |
Pulsed Collector Current |
25 |
A |
IF |
Diode Continuous Forward Current @ TC = 100°C |
3 |
A |
IFM |
Diode Maximum Forward Current |
25 |
A |
PD |
Maximum Power Dissipation @ TC = 25°C |
40 |
W |
Maximum Power Dissipation @ TC = 100°C |
0.32 |
W | |
TJ |
Operating Junction Temperature |
-55 to +150 |
°C |
Tstg |
Storage Temperature Range |
-55 to +150 |
°C |
TL |
Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
250 |
°C |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
FGD3N60LSDTM | Full Production | RoHS Compliant | $0.84 | TO-252(DPAK) | 2 | TAPE REEL | TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FGD Line 3: 3N60LSD |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FGD3N60LSD is available. Click here for more information . |
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The FGD3N60LSD is designed for applications where very low On-Voltage Drop is a required feature.
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) providevery low conduction losses. The FGD3N60LSD is designed for applicationswhere very low On-Voltage Drop is a required feature.