IGBT Transistors 330V 90A PDP Trench
FGA90N33ATDTU: IGBT Transistors 330V 90A PDP Trench
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 330 V | ||
Maximum Gate Emitter Voltage : | +/- 30 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-3PN-3 | Packaging : | Tube |
Technical/Catalog Information | FGA90N33ATDTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 330V |
Current - Collector (Ic) (Max) | 90A |
Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 20A |
Power - Max | 223W |
Mounting Type | Through Hole |
Package / Case | TO-3P |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FGA90N33ATDTU FGA90N33ATDTU |