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FGA90N30TU

IGBT Transistors TBD

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SeekIC No. : 00143872 Detail

FGA90N30TU: IGBT Transistors TBD

FGA90N30TU Data Sheet

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Part Number:
FGA90N30TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 300 V
Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : +/- 30 V
Gate-Emitter Leakage Current : +/- 250 nA Power Dissipation : 219 W
Maximum Operating Temperature : + 150 C Package / Case : TO-3P-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 30 V
Collector-Emitter Saturation Voltage : 1.9 V
Collector- Emitter Voltage VCEO Max : 300 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-3P-3
Power Dissipation : 219 W


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