IGBT Transistors 650V, 60A Field Stop IGBT
FGA60N65SMD: IGBT Transistors 650V, 60A Field Stop IGBT
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Collector- Emitter Voltage VCEO Max : | 650 V | Collector-Emitter Saturation Voltage : | 1.9 V | ||
Maximum Gate Emitter Voltage : | 20 V | Continuous Collector Current at 25 C : | 120 A | ||
Gate-Emitter Leakage Current : | 400 nA | Power Dissipation : | 600 W | ||
Package / Case : | TO-3PN | Packaging : | Tube |