FGA50N100BNTDTU

IGBT Transistors 600V 4 0A UFD

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FGA50N100BNTDTU: IGBT Transistors 600V 4 0A UFD

floor Price/Ceiling Price

US $ 1.59~2.32 / Piece | Get Latest Price
Part Number:
FGA50N100BNTDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~220
  • 220~250
  • 250~500
  • 500~1000
  • Unit Price
  • $2.32
  • $2.09
  • $1.88
  • $1.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1000 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 25 V
Gate-Emitter Leakage Current : +/- 500 nA Power Dissipation : 156 W
Maximum Operating Temperature : + 150 C Package / Case : TO-3P-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 25 V
Collector- Emitter Voltage VCEO Max : 1000 V
Collector-Emitter Saturation Voltage : 2.5 V
Package / Case : TO-3P-3
Gate-Emitter Leakage Current : +/- 500 nA
Power Dissipation : 156 W


Parameters:

Technical/Catalog InformationFGA50N100BNTDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max156W
Mounting TypeThrough Hole
Package / CaseTO-3PN
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FGA50N100BNTDTU
FGA50N100BNTDTU



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