IGBT Transistors 600V 4 0A UFD
FGA50N100BNTDTU: IGBT Transistors 600V 4 0A UFD
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1000 V |
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 25 V |
Gate-Emitter Leakage Current : | +/- 500 nA | Power Dissipation : | 156 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-3P-3 |
Packaging : | Tube |
Technical/Catalog Information | FGA50N100BNTDTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1000V |
Current - Collector (Ic) (Max) | 50A |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
Power - Max | 156W |
Mounting Type | Through Hole |
Package / Case | TO-3PN |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FGA50N100BNTDTU FGA50N100BNTDTU |