IGBT Transistors 650V, 40A Field Stop IGBT
FGA40N65SMD: IGBT Transistors 650V, 40A Field Stop IGBT
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Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A...
Collector- Emitter Voltage VCEO Max : | 650 V | Collector-Emitter Saturation Voltage : | 2.5 V | ||
Maximum Gate Emitter Voltage : | 20 V | Continuous Collector Current at 25 C : | 80 A | ||
Gate-Emitter Leakage Current : | 400 nA | Power Dissipation : | 349 W | ||
Package / Case : | TO-3PN | Packaging : | Tube |