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FFB5551

Transistors Bipolar (BJT) NPN MULTI-CHIP GEN PURPOSE

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FFB5551: Transistors Bipolar (BJT) NPN MULTI-CHIP GEN PURPOSE

FFB5551 Data Sheet

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US $ .08~.12 / Piece | Get Latest Price
Part Number:
FFB5551
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~250
  • Unit Price
  • $.12
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  • $.09
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 160 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 80 Configuration : Dual
Maximum Operating Frequency : 300 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : S-Mini
Packaging : Reel    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Configuration : Dual
Maximum Operating Frequency : 300 MHz
Maximum DC Collector Current : 0.2 A
Collector- Emitter Voltage VCEO Max : 160 V
DC Collector/Base Gain hfe Min : 80
Package / Case : S-Mini


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base Voltage 180 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C



Parameters:

Technical/Catalog InformationFFB5551
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)160V
Current - Collector (Ic) (Max)200mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Frequency - Transition300MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FFB5551
FFB5551



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