IGBT Modules N-CH 1.7KV 975A
FF600R17KF6C_B2: IGBT Modules N-CH 1.7KV 975A
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Product : | IGBT Silicon Modules | Configuration : | Dual |
Collector- Emitter Voltage VCEO Max : | 1700 V | Collector-Emitter Saturation Voltage : | 2.6 V |
Continuous Collector Current at 25 C : | 975 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 4.8 KW | Maximum Operating Temperature : | + 125 C |
Package / Case : | IHM |